Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5086
Title: Study on copper electromigration reliability of the ULSI devices
Authors: Low, Joon Kiat.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2003
Abstract: This project studies copper electromigration reliability with the help of engineers of Chartered Semiconductor Mfg. Ltd. As the processing of the copper metallization can greatly affect its reliability, experiments will be conducted to determine how some of the processing conditions and environments can affect the performance of copper.
URI: http://hdl.handle.net/10356/5086
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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