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https://hdl.handle.net/10356/5097| Title: | Electromigration behaviour of copper metal lines in ULSI devices | Authors: | Ong, Sock Meng. | Keywords: | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects | Issue Date: | 2004 | Abstract: | The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour. | URI: | http://hdl.handle.net/10356/5097 | Schools: | School of Materials Science & Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | restricted | Fulltext Availability: | With Fulltext |
| Appears in Collections: | MSE Theses |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| MSE-THESES_59.pdf Restricted Access | 4.81 MB | Adobe PDF | View/Open |
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