Please use this identifier to cite or link to this item:
Title: Electromigration behaviour of copper metal lines in ULSI devices
Authors: Ong, Sock Meng.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2004
Abstract: The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
4.81 MBAdobe PDFView/Open

Page view(s) 50

Updated on Nov 29, 2020

Download(s) 50

Updated on Nov 29, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.