Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5097
Title: Electromigration behaviour of copper metal lines in ULSI devices
Authors: Ong, Sock Meng.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2004
Abstract: The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.
URI: http://hdl.handle.net/10356/5097
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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