Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5099
Title: Development of metal silicides for deep submicron polycrystalline silicon gate
Authors: Pang, Chong Hau
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2005
Source: Pang, C. H. (2005). Development of metal silicides for deep submicron polycrystalline silicon gate. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are still under intense investigation for future transistor technology. However, reactions between parent metals (Ti, Co and Ni) and silicon often present many different problems during silicides formation.
URI: https://hdl.handle.net/10356/5099
DOI: 10.32657/10356/5099
Rights: Nanyang Technological University
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
MSE-THESES_60.pdf14.03 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.