Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5099
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dc.contributor.authorPang, Chong Hauen
dc.date.accessioned2008-09-17T10:19:57Zen
dc.date.available2008-09-17T10:19:57Zen
dc.date.copyright2005en
dc.date.issued2005en
dc.identifier.citationPang, C. H. (2005). Development of metal silicides for deep submicron polycrystalline silicon gate. Doctoral thesis, Nanyang Technological University, Singapore.en
dc.identifier.urihttps://hdl.handle.net/10356/5099en
dc.description.abstractMetal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are still under intense investigation for future transistor technology. However, reactions between parent metals (Ti, Co and Ni) and silicon often present many different problems during silicides formation.en
dc.format.extent228 p.en
dc.rightsNanyang Technological Universityen
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnectsen
dc.titleDevelopment of metal silicides for deep submicron polycrystalline silicon gateen
dc.typeThesisen
dc.contributor.supervisorPeter Hingen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.description.degreeDOCTOR OF PHILOSOPHY (SME)en
dc.contributor.supervisor2Lee Pooi Seeen
dc.identifier.doi10.32657/10356/5099en
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