dc.contributor.authorPang, Chong Hauen_US
dc.date.accessioned2008-09-17T10:19:57Z
dc.date.accessioned2017-07-23T08:36:56Z
dc.date.available2008-09-17T10:19:57Z
dc.date.available2017-07-23T08:36:56Z
dc.date.copyright2005en_US
dc.date.issued2005
dc.identifier.citationPang, C. H. (2005). Development of metal silicides for deep submicron polycrystalline silicon gate. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/5099
dc.description.abstractMetal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resistances during fabrication of transistors in microelectronics devices. Generally, Titanium disilicides and Cobalt disilicides are widely utilized on transistors while Nickel monosilicides (NiSi) are still under intense investigation for future transistor technology. However, reactions between parent metals (Ti, Co and Ni) and silicon often present many different problems during silicides formation.en_US
dc.format.extent228 p.
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
dc.titleDevelopment of metal silicides for deep submicron polycrystalline silicon gateen_US
dc.typeThesisen_US
dc.contributor.supervisor2Lee Pooi Seeen_US
dc.contributor.schoolSchool of Materials Engineeringen_US
dc.contributor.supervisorPeter Hingen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (SME)en_US


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