Please use this identifier to cite or link to this item:
Title: Analysis and characterization of ultra thin SOI MOSFET by MEDICI
Authors: Shin, Chang Yeop.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2002
Abstract: In this work, the charge coupling, breakdown mechanism and self-heating effect were investigated and identified by two-dimensional and two-carrier device simulation. This work provided comprehensive understanding of unique features of ultrathin SOI MOSFETs and contributed to SOI device modeling and design for future high performance, low power/voltage ICs.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
4.22 MBAdobe PDFView/Open

Page view(s)

checked on Oct 1, 2020


checked on Oct 1, 2020

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.