Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5107
Title: Characterization and structural modification of polysilsesquioxanes for low dielectric constant (k) applications in deep sub-micron devices
Authors: Siew, Yong Kong.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Issue Date: 2003
Abstract: A preliminary study on the thermal stability of different spin-on dielectrics (SODs) has been conducted and it is found that generally organic SODs exhibited lower thermal stability, both in terms of weight loss and the highest allowable temperature, compared to inorganic SODs. On the other hand, thin film characterization and thermal analysis techniques gave evidences which support the notion that the redistribution of Si-0 and Si-ll bonds is the reaction mechanism responsible for the chemical changes induced by heating. Curing of hydrogen silsesquioxane (HSQ) is found to be accompanied by weight loss, dimension change and change in dielectric properties. A three-stage curing model has been proposed based on the data collected.
URI: http://hdl.handle.net/10356/5107
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
MSE-THESES_68.pdf
  Restricted Access
33.89 MBAdobe PDFView/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.