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|Title:||Laser processing of optoelectronic materials||Authors:||Tan, Bee Sim.||Keywords:||DRNTU::Engineering::Materials::Photonics and optoelectronics materials||Issue Date:||2004||Abstract:||In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.||URI:||http://hdl.handle.net/10356/5110||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Theses|
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