Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5110
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dc.contributor.authorTan, Bee Sim.en_US
dc.date.accessioned2008-09-17T10:20:14Z-
dc.date.available2008-09-17T10:20:14Z-
dc.date.copyright2004en_US
dc.date.issued2004-
dc.identifier.urihttp://hdl.handle.net/10356/5110-
dc.description.abstractIn this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.en_US
dc.format.extent140 p.-
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Photonics and optoelectronics materials-
dc.titleLaser processing of optoelectronic materialsen_US
dc.typeThesisen_US
dc.contributor.supervisorYuan, Shuen_US
dc.contributor.schoolSchool of Materials Science & Engineeringen_US
dc.description.degreeMaster of Engineering (SME)en_US
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