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https://hdl.handle.net/10356/5110Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Tan, Bee Sim. | en_US |
| dc.date.accessioned | 2008-09-17T10:20:14Z | - |
| dc.date.available | 2008-09-17T10:20:14Z | - |
| dc.date.copyright | 2004 | en_US |
| dc.date.issued | 2004 | - |
| dc.identifier.uri | http://hdl.handle.net/10356/5110 | - |
| dc.description.abstract | In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used. | en_US |
| dc.format.extent | 140 p. | - |
| dc.rights | Nanyang Technological University | en_US |
| dc.subject | DRNTU::Engineering::Materials::Photonics and optoelectronics materials | - |
| dc.title | Laser processing of optoelectronic materials | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.supervisor | Yuan, Shu | en_US |
| dc.contributor.school | School of Materials Science & Engineering | en_US |
| dc.description.degree | Master of Engineering (SME) | en_US |
| item.fulltext | With Fulltext | - |
| item.grantfulltext | restricted | - |
| Appears in Collections: | MSE Theses | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| MSE-THESES_70.pdf Restricted Access | 16.55 MB | Adobe PDF | View/Open |
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