Please use this identifier to cite or link to this item:
Title: Laser processing of optoelectronic materials
Authors: Tan, Bee Sim.
Keywords: DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2004
Abstract: In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.
Schools: School of Materials Science & Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

Files in This Item:
File Description SizeFormat 
  Restricted Access
16.55 MBAdobe PDFView/Open

Page view(s) 50

Updated on Jul 12, 2024


Updated on Jul 12, 2024

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.