Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5130
Title: Atomistic simulation of epitaxial Si film growth on Si (001) surface
Authors: Xie, Xuepeng.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2001
Abstract: The purpose of this thesis is to study the effect of conditions such as substrate orientation, process temperature, atomic beam energy, thermal dissipation rate and deposition rate on the energetic and microstructure of epitaxial growth of silicon on Si (001) surface.
URI: http://hdl.handle.net/10356/5130
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Theses

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