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|Title:||Graphene growth through segregation method||Authors:||Kristianto, Ronald.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials||Issue Date:||2013||Abstract:||Graphene has been an active research topic since its discovery in 2004. It has many excellent mechanical, electrical and chemical properties that are attractive for commercial applications. However, in order for graphene to be feasible for commercial applications, it still has to clear many challenges. One of them is to have a technique to grow continuous graphene in a low cost manner. From the initial sample preparation through mechanical exfoliation, many techniques have since been developed. One of the developed techniques is segregation. In this work, we will demonstrate a systematic approach to prepare Cu/Ni sample through temperature and time dependence studies. Also, we will determine a carbon source and its deposition process into the prepared Cu/Ni metal sample. Last of all, we will show our attempt to grow graphene via segregation and discuss improvement plans for future work.||URI:||http://hdl.handle.net/10356/52326||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MSE Student Reports (FYP/IA/PA/PI)|
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