Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/5277
Title: | Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application | Authors: | Li, Yibin | Keywords: | DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films | Issue Date: | 2007 | Source: | Li, Y. (2007). Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | Utilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi2Ta2O9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 1012 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10?C/cm2) and high annealing temperature (>800?). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi3+, La3+ and Nd3+ with the Sr2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization. | URI: | https://hdl.handle.net/10356/5277 | DOI: | 10.32657/10356/5277 | Schools: | School of Mechanical and Aerospace Engineering | Rights: | Nanyang Technological University | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | MAE Theses |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
MAE-THESES_1029.pdf | 7.31 MB | Adobe PDF | View/Open |
Page view(s) 50
482
Updated on Mar 18, 2024
Download(s) 5
502
Updated on Mar 18, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.