dc.contributor.authorLi, Yibinen_US
dc.date.accessioned2008-09-17T10:46:54Z
dc.date.accessioned2017-07-23T08:38:29Z
dc.date.available2008-09-17T10:46:54Z
dc.date.available2017-07-23T08:38:29Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationLi, Y. (2007). Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/5277
dc.description.abstractUtilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi2Ta2O9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 1012 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10?C/cm2) and high annealing temperature (>800?). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi3+, La3+ and Nd3+ with the Sr2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleDevelopment of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory applicationen_US
dc.typeThesisen_US
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.contributor.supervisorZhang Shanyong, Samen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (MAE)en_US


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