dc.contributor.authorLi, Yibinen_US
dc.identifier.citationLi, Y. (2007). Development of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory application. Doctoral thesis, Nanyang Technological University, Singapore.
dc.description.abstractUtilization of ferroelectric thin films for nonvolatile random access memory (NvRAM) applications has been under intensive investigation. Films for transistor-type memory require possessing these properties: a large remnant polarization, a low coercive field (2Ec), sufficient fatigue endurance against repetitive polarization switching. Layered perovskite structure SrBi2Ta2O9 (SBT) thin film has attracted ever increasing attention because it exhibits fatigue-free property up to 1012 cycles (even on Pt bottom electrode), excellent retention characteristics, and low leakage current density. However, two shortcomings are involved in SBT thin films: the low remnant polarization (2Pr<10?C/cm2) and high annealing temperature (>800?). Substitution at A or B site can effectively modify polarization properties. Trivalent elemental substitution such as Bi3+, La3+ and Nd3+ with the Sr2+ site induces A-site cation vacancies to satisfy charge neutrality, which significantly improves the low-field polarization.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleDevelopment of sputtered SrBi2Ta2O9 thin films for nonvolatile random access memory applicationen_US
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen_US
dc.contributor.supervisorZhang Shanyong, Samen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (MAE)en_US

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