Study of chemical vapor deposited carbon nanotubes as electrical interconnect

Abstract

This report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films.