Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/53535
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dc.contributor.authorNg, Chou Shing
dc.date.accessioned2013-06-05T01:27:41Z
dc.date.available2013-06-05T01:27:41Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.urihttp://hdl.handle.net/10356/53535
dc.description.abstractThis report aims to optimize the thickness of the Titanium/ Titanium Nitride (Ti/TiN) and Aluminum/Aluminum Oxide (Al/Al2O3) thin films in order to achieve a suitable compromise between the growth of the carbon nanotube as well as high conductivity. Experiments are conducted with various thicknesses of Ti/TiN and Al/Al2O3 thin films in order to find a best fit solution that allows considerable growth of carbon nanotubes while as the same time minimizing the resistivity of the barrier layers. Last but not least, a comparison study is done to find out the differences in properties of the carbon nanotubes grown on the two thin films.en_US
dc.format.extent74 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleStudy of chemical vapor deposited carbon nanotubes as electrical interconnecten_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorTay Beng Kangen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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