Please use this identifier to cite or link to this item:
|Title:||Design and fabrication of zinc oxide multilayers light emitting devices||Authors:||Tsang, Tony Siu Hou||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2011||Source:||Tsang, T. S. H. (2011). Design and fabrication of zinc oxide multilayers light emitting devices. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||Zinc Oxide (ZnO) exhibits a wide band-gap of ~3.4eV and a large exciton binding energy of ~60meV. ZnO has shown a large potential in the development of Ultraviolet (UV) light emitting devices, operating at room temperature. However, the crystal structure of ZnO has hindered its advancement in UV conventional lasers due to the difficulty in facet-cleaving, results in large scattering loss and high laser threshold.||URI:||https://hdl.handle.net/10356/53751||DOI:||10.32657/10356/53751||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.