Please use this identifier to cite or link to this item:
|Title:||Design and fabrication of ultraviolet metal-oxide light-emitting devices||Authors:||Liang, Houkun||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2011||Source:||Liang, H. (2011). Design and fabrication of ultraviolet metal-oxide light-emitting devices. Doctoral thesis, Nanyang Technological University, Singapore.||Abstract:||Zinc Oxide (ZnO) has a wide bandgap energy (~3.37 eV) and high exciton binding enegy (~ 60 meV) which is more than two times larger than that of Gallium Nitride (GaN). Therefore, ZnO has been recognized as a promising candidate of ultraviolet (UV) optoelectronic devices operating at room temperature or even at high temperature. Especially, the high exciton binding energy favors the excitonic stimulated emission in the application of lasers. However, ZnO has a wurtzite crystal structure, and thus two sufficiently smooth mirror surfaces are hardly to be cleaved to form Fabry-Perot cavity. The discovery and development of ZnO random laser successfully avoid this difficulty by forming the lasing resonance via multi-scattering in a closed-loop feedback.||URI:||https://hdl.handle.net/10356/53756||DOI:||10.32657/10356/53756||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Theses|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.