Copper wire bond crack characterization after temperature cycling and correlation with accelerated test (thermal shock)

Abstract

There are more than 8 to 9 billion wires bonded every year on average in the planet and

more than 160 billion Integrated Chips (ICs) produced went through wire bonding

process. With the increased use of wire bonding and extensive infrastructure for chipinterconnection

on wire bonding, more and more industries are driving wire bonding

technology toward increasing yields, decreasing pitches and lowest possible and ever

decreasing cost.

The need for reliability in wire bonding is a necessary step in order to understand how

the degradation of wire bonding that leads to the breaking of wires. This study involved

two types of stress test conditions, temperature cycle and thermal shock. These two

types of stress tests will be analysed to find the correlation and failure analysis to

understand the degradation of the copper wire bonding.

In this report, it also includes a methodology of measuring the currents and voltages to

find the resistance changes and thus by identifying the resistance changes, the

degradation on the wire bonding can be observed.