Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/54509
Title: Hardware development of 3 phase unity power factor ac -ac converter
Authors: Muhammad Fadzil Jamian.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Issue Date: 2013
Abstract: Nowadays commercial buildings have lift systems which require variations of frequency. In this case, AC-AC converters are used to support the change of frequency level. The unity power factor can help to reduce the line losses. This project covered part of the hardware development of 3 phase unity power factor. The development of hardware will be the construction of the gate driver circuit for driving the Insulate Gate Bipolar Transistor modules. Recommendation by most manufacturers, the negative biasing needed in the voltage range of -15V to +15V to drive the IGBT module properly. Experiment conducted shows that negative biasing can be achievable. With reference to the paper “Transformer-less Switch Mode Power Supply” will be discussed for experimental purposes. The efficiency of the SMPS will be tested in the experiment to achieve the desired voltage of 12V. Improvement has been done to the Transformer-less Switched Mode Power Supply to achieve a voltage range of 0V to 12V. This will have the flexibility of supplying different power supply to dictate various loads. The project covered both hardware and software. The hardware testing of the proposed peak detector circuit was being done. However, it did not meet the objective of detecting the peak voltage of the Alternating Current (AC) signal. Therefore, the study of peak detector circuit will be conducted with reference to the paper “Precision Half Wave and Full Wave Rectifier”. The simulation is done using the Power Simulator (PSIM) to simulate the results of the rectification. This will be done in comparison of the proposed peak detector circuit. The simulations of the Precision Half Wave and Full Wave rectifier conducted shows that the desired peak voltage is not achievable due to the voltage drop across the diode.
URI: http://hdl.handle.net/10356/54509
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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