Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/54510
Title: A Low Drop-out (LDO) regulator in SOI-CMOS technology for high temperature application
Authors: Lim, Hwee Yeng.
Keywords: DRNTU::Engineering
Issue Date: 2013
Abstract: With technology development advancing towards low voltage application and coupled with the increasing demand for System-on-Chip (SoC) integration, Low Drop-out (LDO) regulators have gained popularity with the increasing demand for portable electronics, i.e. cellular phones, and other hand-held devices as compared to conventional linear voltage regulators. With the use of 1.0 um SOI-CMOS technology, this report will focus on the designing process of the LDO voltage regulator for high temperature applications. The aim of this project is to design a linear voltage regulator that has an output voltage of precise 5 V (< 1% inaccuracy). The voltage regulator is also expected to operate through a range of temperature of 0 to 300 Degree Celsius. This report will also include fundamental knowledge of linear voltage regulators, as well as various topologies and existing techniques used for the designing of LDO. Lastly, recommendations for future works on the proposed LDO design will be discussed.
URI: http://hdl.handle.net/10356/54510
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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