Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/54583
Title: Semiconductor nanowire growth by using VLS method
Authors: Zhao, Tai Ge.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Abstract: Semiconductor Nano-Wires (NWs) are hair like, one-dimensional (1D) nanomaterial with diameters in the sub-one hundred nanometer scale and lengths ranging from several hundreds of nm to as high as a few cm. Semiconductor Nano-Wires (NWs) are expected to play a key role for next generation electronic, photonic, sensor and energy device applications.Hence it is crucial to have a better understanding in growth, characterization, assembly and integration in semiconductor NWs. In this project the author focus on a general scheme based on a gold (Au) cluster catalysed vapor–liquid–solid (VLS) growth mechanism for the studying of characteristics of NWs.
URI: http://hdl.handle.net/10356/54583
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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