Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/54664
Title: Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications
Authors: Fang, Zheng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2013
Source: Fang, Z. (2013). Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and investigation of underlying physics of resistive switching mechanism and current conduction mechanism indifferent resistance states in oxide-based RRAM, in order to improve device performance for the implementation and integration of memory cell into CMOS circuits.
URI: https://hdl.handle.net/10356/54664
DOI: 10.32657/10356/54664
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
PhD Thesis_Fang Zheng_final.pdf4.66 MBAdobe PDFThumbnail
View/Open

Page view(s) 50

399
Updated on May 15, 2021

Download(s) 10

307
Updated on May 15, 2021

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.