dc.contributor.authorFang, Zheng
dc.date.accessioned2013-07-15T07:31:04Z
dc.date.accessioned2017-07-23T08:34:52Z
dc.date.available2013-07-15T07:31:04Z
dc.date.available2017-07-23T08:34:52Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationFang, Z. (2013). Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/54664
dc.description.abstractThis thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and investigation of underlying physics of resistive switching mechanism and current conduction mechanism indifferent resistance states in oxide-based RRAM, in order to improve device performance for the implementation and integration of memory cell into CMOS circuits.en_US
dc.format.extent188 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleInvestigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applicationsen_US
dc.typeThesis
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.contributor.supervisorYu Hongyu
dc.contributor.supervisorFan Weijunen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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