Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/54676
Title: Investigation of quantum dot structures for terahertz emission
Authors: Tan, Thiam Khee.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Issue Date: 2013
Abstract: The terahertz (THz) frequency has many interesting and useful applications and quantum dot (QD) semiconductor devices are good candidates for generation of terahertz emission via difference frequency generation (DFG) or intraband trasitions lasing. Both techniques require that the energy difference ∆E of the energy states be less than 41.3 meV to achieve terahertz emission. This project will be on the study of QD structures, in particular the well-studied InAs QDs, and its optical properties. Characterization techniques are performed and the results obtained will be used for analysis in how QD growth conditions like monolayer coverage (ML) and growth rate (GR) affect the energy states and ∆E of the QDs.
URI: http://hdl.handle.net/10356/54676
Schools: School of Electrical and Electronic Engineering 
Organisations: A*STAR Institute of Materials Research and Engineering
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
EB5108-121.pdf
  Restricted Access
1.7 MBAdobe PDFView/Open

Page view(s) 50

475
Updated on Jun 13, 2024

Download(s) 50

22
Updated on Jun 13, 2024

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.