Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/5532
Title: Deposition of Ta-N thin films as diffusion barrier
Authors: Zhang, Qing
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2004
Abstract: Sputtered Ta-N thin films have been known to be an attractive interlayer between Cu and Si metallization as diffusion barrier. They have many good properties from the diffusion barrier point of view. They have high melting point (3293 K) and therefore expected to have high activation energy for both lattice and grain boundary diffusion. It does not form intermetallic compounds with copper and thus provides a stable interface between copper and silicon.
URI: http://hdl.handle.net/10356/5532
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MAE Theses

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