Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/55583
Title: Dynamic bias-temperature instability study of metal/high-K gate stacks
Authors: Gao, Yuan
Keywords: DRNTU::Engineering
Issue Date: 2014
Source: Gao, Y. (2014). Dynamic bias-temperature instability study of metal/high-K gate stacks. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: In summary, a systematic study on the dynamic BTI of the metal/high-k gate stacks is conducted. The evolution of the switching oxide traps under the NBT and PBT stressing are compared and the possible oxygen defect framework is proposed. The frequency dependence of the BTI recovery is also examined. Implications of these new experimental observations on the device reliability assessment and modeling are discussed.
URI: http://hdl.handle.net/10356/55583
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Theses

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