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|Title:||Development and characterization of PZT thin films||Authors:||Zhou, Min.||Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2002||Abstract:||Fabrication processes and testing of the completed devices were carried out at NTU Micro-Machine Center. X-ray diffraction analysis and the Polarisation-Field (P-E hysteresis loops) of PZT thin film were measured to characterize the film quality and the electrical properties. The process to fabricate the cantilever structure should be optimized to obtain the maximum piezoelectric constants and low residual stress.||URI:||http://hdl.handle.net/10356/5574||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||MAE Theses|
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