Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/55937
Title: Low power SRAM-PUF with improved reliability & uniformity utilizing aging impact for security improvement
Authors: Garg, Achiranshu
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Computer hardware, software and systems
Issue Date: 2013
Source: Garg, A. (2013). Low power SRAM-PUF with improved reliability & uniformity utilizing aging impact for security improvement. Master’s thesis, Nanyang Technological University, Singapore.
Abstract: Hardware Intrinsic Security (HIS) is currently a very crucial aspect of the electronics industry aimed towards protecting hardware IPs from infringement. Also, Wireless Sensor Nodes (WSNs) that are increasingly acting as a backbone to the information channels need a secure and low-power encryption system to protect them from malicious attacks. Traditional electronic devices store encrypted keys in battery-powered volatile memories or use Non-Volatile Memories for permanent storage of security keys. These are not very secure since the security key is exposed and relatively easy to hack from Non-Volatile Memory (NVM). Additionally, it comparatively consumes more power for operating over a long period of time. Thus, SRAM-PUF can provide a viable solution to both the problems - secure encryption & minimal power consumption.
URI: http://hdl.handle.net/10356/55937
metadata.item.grantfulltext: restricted
metadata.item.fulltext: With Fulltext
Appears in Collections:EEE Theses

Files in This Item:
File Description SizeFormat 
Thesis_SRAM_PUF_AchiranshuG_G1101729A.pdfTheses2.15 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.