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Title: Synthesis of borate-based epoxy molding compound for radiation hardened electronics packaging
Authors: Muhammad Ridhwan Md Yusoff
Keywords: DRNTU::Engineering
Issue Date: 2014
Abstract: Recently, considerable attention has been focused on the development of a new class of shielding material made from a mixture of epoxy resin and boron oxide (B2O3). This material exhibits better shielding performance than existing materials thus making it suitable for use in radiation machineries and space applications. In this project, the effect of boron oxide on the thermal properties of epoxy was investigated. Samples containing different compositions of boron oxide were prepared and characterized using Thermal Gravimetric Analysis (TGA), Differential Scanning Calorimetry (DSC) and Fourier Transform Infra Red (FTIR) spectroscopy. TGA studies revealed that the addition of boron oxide increases the decomposition temperature of epoxy by about 30oC of its original value by the addition of 10 wt% boron oxide. This implies that the presence of boron oxide helps to improve the stability of epoxy at a higher working temperature. Dynamic DSC results showed that there was an increment in glass transition temperature with increase loading of boron oxide. FTIR analysis concluded that the improvement in decomposition temperature and glass transition temperature of the epoxy-boron oxide samples is not contributed by a new bond or phase. Other characterization technique such as Mass Spectroscopy (MS) is proposed for future works to confirm the possibility on the formation of new bond or phase in the samples. Observation of the samples by optical microscopy showed a non-homogeneous dispersion of boron oxide in the epoxy matrix. The surface at the centre of the sample was concentrated with boron oxide whereas the surface at the edge of the sample contained very little boron oxide.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

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