Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/60442
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dc.contributor.authorChen, Wei
dc.date.accessioned2014-05-27T06:15:09Z
dc.date.available2014-05-27T06:15:09Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.urihttp://hdl.handle.net/10356/60442
dc.description.abstractThe development of this project was divided mainly into two parts, the design of dc-ac inverter including Prism based simulation and hardware production, and the hardware inverter protection including Matlab based power loss simulation and heat sink selection regarding to the simulated power loss results. The original project object was using GaN switch to design the inverter. However, the GaN switch was unable to be delivered in hardware production, and IGBT switch was to be used instead. Since the GaN switch is capable of producing more than MHz leveled frequency, the Prism based simulation for GaN was conducted and investigated corresponding to the inductor. In general, the objectives of this project was successfully delivered.en_US
dc.format.extent90 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineeringen_US
dc.titleGrid-tied inverter for solar power using Gallium Nitride (GaN) devices - part I hardwareen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorWang Pengen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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