Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/60483
Title: Fabrication and characterization of graphite/graphene by TCVD method
Authors: Chua, Wee Siong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Abstract: Graphene is an isolated atomic plane of graphite and graphite can be considered as multi-layers of graphenes. There are many potential applications for graphite/graphene including flexible display screens, electric circuits and solar cells. Fabrication of graphite/graphene can be done by many methods. Here, TCVD are used as the fabrication method with nickel foam as the substrate and ethanol as the carbon source. Characterisation was performed using Scanning Electron Microscopy and Raman Spectroscopy, to observe the surface and determine the graphene layers of the fabricated substrate. There were four parameters tested in this fabrication to obtain single layer graphene. First parameter tested was the gas flow rate which consisted of Argon and Hydrogen. Followed by the annealing and carbon exposure time and lastly, cooling rate. The results showed that single layer graphene is obtained as desired. Although all the four parameters plays a role in growing graphite/graphene, cooling rate has more significant effect in obtaining single layer or multi-layer graphene.
URI: http://hdl.handle.net/10356/60483
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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