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|Title:||Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach||Authors:||Ong, Beng Sheng||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Abstract:||Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects.||URI:||http://hdl.handle.net/10356/60541||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SMA Theses|
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