Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/60541
Title: Platform for multi-gate InxGa1-xAs nanostructure nmosfet by top-down approach
Authors: Ong, Beng Sheng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Abstract: Scaling of conventional planar Si-based CMOS technology is reaching its limits towards the 16 nm technology node and further downscaling does not guarantee exponential performance improvement anymore due to various process control and reliability issues and fundamental constraints. Therefore, other alternative channel materials need to be explored in order to enable ultra low-power and high-speed electronics. InxGa1-xAs with high electron mobility is considered a good replacement for n-type Si MOSFET. Alternate architectures such as FinFETs and nanowire transistors are considered for further performance enhancement and to suppress short channel effects.
URI: http://hdl.handle.net/10356/60541
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:SMA Theses

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