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dc.contributor.authorPham, Huynh Tram
dc.date.accessioned2014-05-29T05:45:52Z
dc.date.available2014-05-29T05:45:52Z
dc.date.copyright2009en_US
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/10356/60681
dc.description.abstractInSb is an important material for high frequency electronic devices and for mid-infrared radiation detection. By adding a small amount of N into InSb, the band gap is found to decrease and this is useful for long wavelength infrared detector application. The main objectives of this thesis are to investigate the effect of N incorporation in InSbN and control the N incorporation to obtain the desired band gap. In addition, growth and doping of InSb material are also studied and optimized as they are necessary for the development of photon detector. The most advanced crystal growth technologies to date are utilized in the study: solid-source molecular beam epitaxy equipped with Sb valved cracker cell, CBr4 source, and N radio frequency (RF) plasma. The as-grown epitaxial layers are analyzed using chemical and physical characterization (x-ray diffraction, secondary ion mass spectrometry, xray photoelectron spectroscopy), electrical characterization (Hall effect measurement), and optical characterization (Raman spectroscopy, Fourier transform infrared spectroscopy, photocurrent measurement) techniques.en_US
dc.format.extent172 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Manufacturingen_US
dc.titleMolecular beam epitaxy of dilute nitride indium antimonide materials for long wavelength infrared applicationen_US
dc.typeThesis
dc.contributor.supervisorYoon Soon Fatten_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeDoctor of Philosophy (IMST)en_US
dc.contributor.researchSingapore-MIT Alliance Programmeen_US
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