Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/60691
Title: A study of the electronic properties of III-V compound semiconductor integrated with silicon
Authors: Chen, Kah Pin
Keywords: DRNTU::Engineering::Materials
Issue Date: 2011
Abstract: This thesis presents systematic studies on monolithic heteroepitaxial integration of III-V compound semiconductor on Si substrate employing the graded Si1-xGex buffer layer. One of the essential growth procedures for antiphase boundary free GaAs/Ge growth is the pre-growth high-temperature in-situ annealing of a Ge surface coupling with the use of a 6o off-cut Si substrate. Besides, a study was performed to examine the impact of various GaAs buffer thicknesses on the electrical characteristics of GaAs grown on the hetero-substrate. Furthermore, an in-depth study of the dependence of electrical characteristics on proximity to the GaAs/Ge heterointerface was performed using deep-level transient spectroscopy analysis. Lastly, AlGaAs/GaAs heterojunction bipolar transistors were grown on the Ge/graded-Si1-xGex/Si hetero-substrate to demonstrate the viability of this integrated platform. A correlation between the DC characteristics, especially offset voltage and deep-level traps behavior in the GaAs layer, were discussed.
URI: http://hdl.handle.net/10356/60691
Schools: School of Electrical and Electronic Engineering 
Research Centres: Singapore-MIT Alliance Programme 
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:SMA Theses

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