Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/60884
Title: Electrical characterization of metal oxide thin film transistors
Authors: Mak, Wei Liang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2014
Abstract: Thin film transistors (TFTs) are one of the most important microelectronic components in flat panel displays. Hydrogenated amorphous silicon (a-Si:H) is the material of choice for the channel layer in TFTs used in liquid crystal displays (LCDs). This is due largely to its flexibility in its applications and can be deposited over large areas that lead to lower manufacturing costs. However a-Si:H has electrical performance problems when used in high resolution displays (e.g. organic light emitting diodes (OLEDs) and 3D display with high frame rates). This leads to the finding of a new material, which are amorphous oxide semiconductors (AOS) to be the channel layer in next generation TFTs.
URI: http://hdl.handle.net/10356/60884
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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