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https://hdl.handle.net/10356/61132
Title: | Monolithic integration of GAAS-to-SI by direct wafer bonding | Authors: | Yeo, Chiew Yong | Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2013 | Source: | Yeo, C .Y. (2013). Monolithic integration of GAAS-to-SI by direct wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore. | Abstract: | While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors. | URI: | https://hdl.handle.net/10356/61132 | DOI: | 10.32657/10356/61132 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | SMA Theses |
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File | Description | Size | Format | |
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YeoChiewYong2014.pdf | Main thesis | 147.32 MB | Adobe PDF | ![]() View/Open |
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