Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/61132
Title: Monolithic integration of GAAS-to-SI by direct wafer bonding
Authors: Yeo, Chiew Yong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Yeo, C .Y. (2013). Monolithic integration of GAAS-to-SI by direct wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore.
Abstract: While Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors.
URI: https://hdl.handle.net/10356/61132
DOI: 10.32657/10356/61132
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SMA Theses

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