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Title: ZnO and rare earth nanoparticles embedded in SiO2 matrix (ZnO-nc: Eu3+SiO2)
Authors: Koh, Amelia Jiamin
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Abstract: This report covers the study of the development of Zinc Oxide nanocrystals (ZnOnc) doped with Europium (III) Nitrate embedded in SiO2 matrix. The thin films have been developed using sol-gel methods based on previous studies. The objectives are to verify the formation of ZnO-nc and thereafter, optimize the energy transfer process of excited ZnO-nc emission to overlap with the absorption band of Eu3+. Emission intensity from ZnO-nc are recorded using photoluminescence (PL). The optimization process of developing Eu3+ doped ZnO-nc is carried out through varying of time given for gelation during sol-gel process, dopant composition in the matrix, as well as annealing environment. It is conclusive that the optimum dopant concentration of Eu3+ was also found to be between 10-15%. Optimal annealing environment is set to be at 450oC, accompanied with a combination of Rapid Thermal Processing and post-annealing procedures. The following findings are in light of increased interest pertaining to ZnO-nc and its applications the optoelectronic industry which comprises of light emitting displays as well as UV photodetectors.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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