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|Title:||Study of ceramics and porcelain history, and Sio2 and high-K in electrical and electronic application||Authors:||Lim, Ivy Su Fang||Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2014||Abstract:||Outside influences are important inspirations to potters during the period of cultural isolation. As it evolve through the trade of ceramics. Ceramics like textiles are trade across different cultures more easily than paintings as these paintings from unfamiliar cultures cannot be understood. With the advancement of methods applied, ceramics strength and toughness increases over the year. Over the last few decades, there have been major advances in the field of semiconductor materials and semiconductor devices. Silicon oxide has it specific unique properties and is widely used in the fabrication of semiconductor devices. For instance, it is used as a gate insulator for metal-oxide semiconductor (MOS) devices, thermal isolation, masking material, passivation layers and so on. The key point with regards to thermally grown oxide films is that they have low surface defects. Silicon oxide films are also used to insulate conductivity from each other or isolate certain region on a common silicon substrate. Furthermore, oxide films are also used in making capacitors. The success story of semiconductor industry is due to continuous improvement of integrated circuit performance. However as the silicon oxide thickness reduces it will start to have current leakage and reliability issues. With the challenges faced in scaling down transistors, high-k dielectrics have been introduced to tackle the potential problems arisen from the fabrication. The improvement has been achieved by reducing the dimensions of key components used in circuit such as MOSFET (metal-oxide-semiconductor field-effect transistor). The number of transistors used on a chip has been increased due to the reduction of device dimensions. Because of this, computing and mobile phone devices are getting smaller, smarter and faster.||URI:||http://hdl.handle.net/10356/61313||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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