Low temperature growth of carbon nanotubes

Abstract

Commercial Flip Chips has faced fine pitch problems with conventional copper bumps. Carbon nanotubes (CNTs) are proposed to solve downscaling difficulties and increase the number of bumps per area. In order to carry out CNTs growth on integrated chips, low temperature is recommended to do so. In this study, Thermal Chemical Vapor Deposition machine is used to grow CNTs interconnects bumps at lower temperature on test structures. Design of experiment is carried out to find the appropriate combination of growth parameters to be grown and was synthesized using both bottom and top heat methodologies to collect samples for analysis. Results show growth and annealing duration are defining factors that affect overall CNTs growth.