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|Title:||Catalyst-free growth of hexagonal-boron nitride on amorphous oxide substrates||Authors:||Toh, Joo Wah||Keywords:||DRNTU::Engineering||Issue Date:||2014||Abstract:||Atomically thin two-dimensional (2D) hexagonal boron nitride (h-BN) exhibit many attractive properties such as high thermal conductivity and stability, high mechanical performance, electrically insulating, chemically inert and resistant to corrosion. This report will consist of literature review which will summarize the basic properties on 2D material such as graphene and h-BN, their synthesis methodologies and the conventional transfer process to transfer the film onto any arbitrary substrates. Different types of characterisation tools were used such as Raman spectroscopy, XPS, UV-Vis, AFM, TEM, SEM and 4 point probe to identify the properties of the as-grown h-BN. In this report, we demonstrate a controllable direct growth of h-BN on amorphous silicon oxide via chemical vapor deposition (CVD) using ammonia borane as precursor. We further investigate several growth-dependent parameters through varying the ammonia borane content in the precursor and temperature use to heat the precursor, the growth temperature and duration, the effects of using atmospheric pressure growth.||URI:||http://hdl.handle.net/10356/62027||Rights:||Nanyang Technological University||Fulltext Permission:||restricted||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Student Reports (FYP/IA/PA/PI)|
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