Synthesis and optical properties of GaN nanowires

Abstract

We use LPCVD and silicon wafer to synthesis straight GaN nanowires.The parameters of the growth condition has been changed to gain the best results. PL and Raman spectroscopy has been used to study the optical properties of GaN nanowires.To further investigate the promising optical properties of GaN wire, power dependent and temperature dependent photoluminescence measurement is conducted on a nanolaser made by InGaN/GaN multiple quantum well nanowire. The complex signal shows the competition carrier recombination mechanism between band-filling effect, screening of internal electric field by photogenerated carriers, inhomogeneity and carrier localization.