Please use this identifier to cite or link to this item:
Title: Phase transition in WSe2(1-x)Te2x alloys and their application in field effect transistor
Authors: Le, Quang Luan
Keywords: DRNTU::Engineering::Materials
Issue Date: 2015
Abstract: Alloying of transition metal dichalcogenides is a promising approach to create materials suitable for electronic applications. WSe2 and WTe2 are from group 6 transition metal dichalcogenides and possess different structure of 2H and distorted 1T respectively. In this work, single crystals of WSe2(1-x)Te2x alloys (0 ≤ x ≤ 1) were successfully synthesized by chemical vapor transport while WSe2 and WTe2 were two ends of the alloy spectrum. The crystal structure of alloys depended on values of x. The alloys exhibited 2H structure for x ranged within 0-0.6 and distorted 1T structure for x values of 0.5-1. There was a shift in crystal structure from 2H to distorted 1T when x increased from 0 to 1 with a transition zone at the range of 0.5-0.6. In addition, 2H WSe2(1-x)Te2x alloys showed decrease in bandgap with increasing of x, which opened the possibility of bandgap controlling. Moreover, FET device based on few layer 2H WSe2(1-x)Te2x alloys showed Ion/Ioff ratio of 103 and charge mobility of 11.5 cm2V-1s-1; thus indicating its feasibility for application in FET and other nanoelectronics devices.
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:MSE Student Reports (FYP/IA/PA/PI)

Files in This Item:
File Description SizeFormat 
FYP report_Le Quang Luan.pdf
  Restricted Access
1.77 MBAdobe PDFView/Open

Google ScholarTM


Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.