Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/63831
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dc.contributor.authorLu, Qian Qian
dc.date.accessioned2015-05-19T06:14:39Z
dc.date.available2015-05-19T06:14:39Z
dc.date.copyright2015en_US
dc.date.issued2015
dc.identifier.urihttp://hdl.handle.net/10356/63831
dc.description.abstractAs an interface of analog and digital domain, high-speed ADC with moderate-to-high resolution and low power consumption is expected in many applications. In this final year project, a fully differential SAR ADC is designed and implemented in Global Foundries 65nm CMOS process. It consists of a dynamic comparator with offset calibration, binary-weighted capacitive array with attenuation capacitor and SAR control logic circuit. The simulation results show that with sampling frequency 166MHz, this ADC can achieve a SNDR of 47.27dB and ENOB of 7.56bits at 82.1MHz input frequency and SNDR of 49.50dB and ENOB of 7.93bits at 3.9MHz input frequency. The peak-to-peak voltage of differential input signal is 0.6V with common mode voltage 900mV. The ADC consumes 2.3mW at 1.2V supply voltage. It achieves an FOM of 54.75fJ/conversion-step.en_US
dc.format.extent56 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleHigh-Speed ADCen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorChang, Joseph Sylvesteren_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US
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Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)
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LQQ_FYP Report final_submitted.pdf
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