Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/64352
Title: Fabrication and characterisation of room temperature detector
Authors: Agustino
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2015
Abstract: Indium Arsenide Antimonide (InAsSb) has been widely considered a good candidate for the development of infrared photodetector at room temperature due to its various advantages compared with Mercury Cadmium Telluride (MCT) such as reduced Auger recombination rate, better stability over large area, higher electron and holes mobility, and commercial availability of high quality and low cost substrates. Extensive effort has been taken into building photodetector using this material by the researchers in the past decades, and great progress has been made. However, until now the performance of such kinds of photodetector is still unsatisfied. In this report, firstly we rediscover various experiments done by the researcher with different strategies and their failure. The testing procedure used to test the responsivity and quantum efficiency of the infrared photodetector in this thesis is based on a photocurrent measurement system which is controlled by the LabVIEW software. Since the photodetector at room temperature is usually weak, in order to distinguish the small signal and make the test result more accurate, it is required that the photocurrent measurement system should has a low intrinsic noise, large pre-amplifier gain, and better controllability. To this end, in this thesis, a pre-amplifier circuit for the photocurrent measurement system is designed and tested, and then the LabVIEW software which is used to control the system is recreated and some modification are made accordingly. At last, photoresponse characteristic of the InAsSb photodetector has been measured using this system.
URI: http://hdl.handle.net/10356/64352
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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