Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/64390
Title: Fabrication and characterization of semiconducting transition metal dichalcogenides field effect transistors
Authors: Ngiam, Lee Hui
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2015
Abstract: Research has revealed that transition metal dichalcogenides (TMDCs) have demonstrated a wide range of chemical, electronic, mechanical, optical and thermal properties. They are range from insulators, semimetals to semiconductors. Of which, the form receiving much attention today is the two dimensional semiconductor from this class of materials. Semiconductors from this class of materials will be useful in digital electronics and optoelectronic devices. As there are still a number of materials under this class have yet to be explored or little is known about them, this project will be focusing on one particular TMDCs material. In this project, palladium diselenides (PdSe2) will be studied. The main objective is to investigate the unique properties of PdSe2 for future development on nanoscale devices. The preparation of the material by micromechanical cleavage, fabrication of the prototype and electrical characterization will be discussed in this report.
URI: http://hdl.handle.net/10356/64390
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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