Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/64644
Title: Resistive and breakdown study of two-terminal graphene-based memory devices
Authors: Fairus Sholihin Abu Bakar
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2015
Abstract: Graphene is a newly discovered material that has a lot of potential for applications. Some of the studies that have been done on graphene describe how it can be used as memory device. Our device has a simple structure, made up of two electrodes connected by graphene. It is able to switch between two states (ON/OFF) based on the applied voltage. There are uncertainties with regards to what causes the breakdown (when the device switches to high resistance state – ON). Therefore in this project we tried to understand the switching behaviour of this graphene device. The approach was to have devices of different dimensions and analyse the electrical characteristics (R, I, V, etc.) before, during and after breakdown.
URI: http://hdl.handle.net/10356/64644
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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