dc.contributor.authorPrabhakar, RajivRamanujam
dc.date.accessioned2015-08-27T02:29:45Z
dc.date.accessioned2017-07-23T08:38:03Z
dc.date.available2015-08-27T02:29:45Z
dc.date.available2017-07-23T08:38:03Z
dc.date.copyright2015
dc.date.issued2015
dc.identifier.citationPrabhakar, R. (2015). Solution processed earth abundant copper iron/manganese tin sulphide thin films for photovoltaic applications. Master’s thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/65364
dc.description.abstractThis work focuses on earth abundant Cu2(Fe,Mn)SnS4 (C(F,M)TS) thin films for solar absorber materials. Synthesis of C(F,M)TS by a simple non-toxic spray pyrolysis technique is reported. X-Ray diffraction and Raman spectroscopy confirm the presence of C(F,M)TS in the thin films after sulphurization. CFTS and CMTS exhibited band gaps, carrier density and carrier mobility similar to CIGS and CZTS. CFTS was employed as a counter electrode in dye-sensitized solar cells (DSSCs) and exhibited good conversion efficiencies (8.03%). A photovoltaic device with a structure of Mo/CMTS/CdS/TCO/top electrode was fabricated as a proof-of-concept and yields a preliminary power conversion efficiency of ~ 0.2%. Through analyses of the device characteristics we identify a key problem of very high carrier density in the CMTS absorber that leads to short collection length, low Voc, low quantum efficiency at long wavelength and high shunt conductance that quench the fill factor.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Materials::Energy materialsen_US
dc.titleSolution processed earth abundant copper iron/manganese tin sulphide thin films for photovoltaic applicationsen_US
dc.typeThesis
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.contributor.supervisorLydia Helena Wongen_US
dc.description.degreeMASTER OF ENGINEERING (MSE)en_US
dc.identifier.doihttps://doi.org/10.32657/10356/65364


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