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Title: Transparent conductive thin film
Authors: Sri Jeeva Santhira Seakaran
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2015
Abstract: This project involves the fabrication and optimization of Transparent Conductive Oxides (TCO). The goal of this project is to develop an alternative TCO to Indium-Tin Oxide (ITO). As the demand for Indium-Tin Oxide TCOs is increasing the price of indium is increasing proportionally. This report will first evaluate two different TCO thin films. These thin films are Gallium-doped Zinc Oxide and Aluminium-doped Zinc Oxide. After evaluating the two thin films, a suitable solution with the optimum dopant concentration will be chosen to be further optimized. Upon choosing the solution with the best level of dopant concentration, the process step of annealing in the furnace was varied and temperatures between 500 and 600 degrees Celsius. This report also focused on the comparison of annealing using a furnace as well as annealing using Rapid Thermal Processing (RTP). The number of cycles required for annealing was varied between 1 and 5 cycles to find the optimum number of RTP cycles needed to achieve the best results. After finding the required number of cycles need to achieve the best results, the concentration of ZAD are varied between 0.5 mol/l and 0.7 mol/l. Resistivity of 1.11 kilo ohms per centimetre with an optical transmittance of 97% was achieved with 1.5 mol% of Gallium with a 0.6 mol/l concentration of ZAD using RTP to anneal.
Schools: School of Electrical and Electronic Engineering 
Rights: Nanyang Technological University
Fulltext Permission: restricted
Fulltext Availability: With Fulltext
Appears in Collections:EEE Student Reports (FYP/IA/PA/PI)

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