Millimeter-wave IC design techniques for beam-forming applications

Abstract

The monolithic millimeter-wave integrated circuits have the advantages of high performance, in terms of bandwidth, power consumption, compact physical size, and hence great integration. Novel building blocks with excellent performance provide the possibility of realizing high speed millimeter-wave communication systems. This research explores and proposes various millimeter-wave design techniques using GLOBALFOUNDRIES 65-nm CMOS technology. In the first part, miniaturized millimeter-wave SPDT switches are investigated and designed. Using the magnetic switchable artificial resonator concept, two designs achieve low insertion loss and high isolation at 130-180 GHz and 220-285 GHz, respectively. The size reduction is more than 90% compared to prior arts. In the second part of the research, CMOS passive phase shifters with fine digital phase control are analyzed and designed. By deploying the proposed switched-varactor technique, the fabricated prototype achieves 3-bit phase control in a 90° tuning range at 60 GHz, with low insertion loss and compact circuit size. To cater for 360° phase tuning range applications, the miniaturized switch-type phase shifter is co-designed with the former phase shifter. The measured chip features 5-bit 360° phase control, low insertion loss, small phase/gain errors, and compact size. The last part of the research presents a millimeter-wave bidirectional low-noise amplifier power amplifier design without using RF switches. The proposed bidirectional matching networks are employed to emulate the lossy RF switches used for conventional bidirectional amplifier designs. A prototype is designed and fabricated for 60 GHz applications. The measured amplifier obtains stable 20 dB power gain in both operation modes, with low noise figure and medium output power.